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Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGFW20V60F
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RFQ
870
In-stock
STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop Through Hole TO-3PF-3 + 175 C Tube 52 W Single 600 V 2.3 V 40 A 250 nA 20 V
SGF23N60UFTU
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RFQ
676
In-stock
Fairchild Semiconductor IGBT Transistors 600V/12A Through Hole TO-3PF-3 + 150 C Tube 75 W Single 600 V 2.1 V 23 A +/- 100 nA +/- 20 V
SGF5N150UFTU
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RFQ
188
In-stock
Fairchild Semiconductor IGBT Transistors 1500V / 5A Through Hole TO-3PF-3 + 150 C Tube 62.5 W Single 1500 V 4.7 V 10 A +/- 100 nA +/- 20 V
STGFW30V60F
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RFQ
586
In-stock
STMicroelectronics IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop Through Hole TO-3PF-3 + 175 C Tube 58 W Single 600 V 2.3 V 60 A 250 nA 20 V
FGAF40N60UFTU
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RFQ
77
In-stock
Fairchild Semiconductor IGBT Transistors 40A/600V/ IGBT Through Hole TO-3PF-3 + 150 C Tube 100 W Single 600 V 3 V 40 A 100 nA +/- 20 V
SGF80N60UFTU
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RFQ
772
In-stock
Fairchild Semiconductor IGBT Transistors Discrete Hi-P IGBT Through Hole TO-3PF-3 + 150 C Tube   Single 600 V       +/- 20 V
FGAF40N60UFDTU
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RFQ
Fairchild Semiconductor IGBT Transistors Ultrafast Through Hole TO-3PF-3 + 150 C Tube 100 W Single 600 V 3.1 V 40 A +/- 100 nA +/- 20 V
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