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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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21
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast IGBT TO-247 | Through Hole | TO-247AC-3 | + 175 C | Tube | 483 W | Single | 600 V | 1.65 V | 140 A | 200 nA | 20 V | |||
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59
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AC-3 | + 150 C | Tube | 305 W | Single | 1200 V | 1.7 V | 60 A | 200 nA | 30 V |
