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19 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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974
In-stock
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STMicroelectronics | IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 375 W | Single | 650 V | 1.6 V | 80 A | 250 nA | +/- 20 V | |||
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295
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3P | + 175 C | Tube | 469 W | Single | 600 V | 1.85 V | 120 A | 250 nA | 20 V | |||
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1,084
In-stock
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STMicroelectronics | IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 283 W | Single | 650 V | 1.6 V | 80 A | 250 nA | +/- 20 V | |||
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490
In-stock
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STMicroelectronics | IGBT Transistors 1250V 20A trench gte field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 259 W | Single | 1.25 kV | 2.55 V | 40 A | 250 nA | 20 V | |||
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476
In-stock
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STMicroelectronics | IGBT Transistors 600V 40A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 283 W | Single | 600 V | 1.6 V | 80 A | 250 nA | +/- 20 V | |||
|
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289
In-stock
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STMicroelectronics | IGBT Transistors 600V 30A High Speed Trench Gate IGBT | Through Hole | TO-3P | + 175 C | Tube | 258 W | Single | 600 V | 2.35 V | 60 A | 250 nA | 20 V | |||
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72
In-stock
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STMicroelectronics | IGBT Transistors Trench gate H series 650V 80A HiSpd | Through Hole | TO-3P | + 175 C | Tube | 469 W | Single | 650 V | 1.6 V | 120 A | 250 nA | +/- 20 V | |||
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300
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3P | + 175 C | Tube | 469 W | Single | 650 V | 1.6 V | 120 A | 250 nA | 20 V | |||
|
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573
In-stock
|
STMicroelectronics | IGBT Transistors 600V 60A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 375 W | Single | 600 V | 1.6 V | 80 A | 250 nA | +/- 20 V | |||
|
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135
In-stock
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STMicroelectronics | IGBT Transistors 600V 40A High Speed Trench Gate IGBT | Through Hole | TO-3P | + 175 C | Tube | 283 W | Single | 600 V | 2.35 V | 80 A | 250 nA | 20 V | |||
|
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495
In-stock
|
STMicroelectronics | IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 375 W | Single | 650 V | 1.6 V | 80 A | 250 nA | +/- 20 V | |||
|
GET PRICE |
590
In-stock
|
STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3P | + 175 C | Tube | 260 W | Single | 600 V | 1.55 V | 60 A | 250 nA | 20 V | |||
|
GET PRICE |
429
In-stock
|
STMicroelectronics | IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 283 W | Single | 650 V | 1.6 V | 80 A | 250 nA | +/- 20 V | |||
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VIEW | Toshiba | IGBT Transistors 600V/30A DIS | Through Hole | TO-3P | + 150 C | Single | 600 V | 30 A | +/- 20 V | ||||||||
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294
In-stock
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STMicroelectronics | IGBT Transistors 600V 40A High Speed Trench Gate IGBT | Through Hole | TO-3P | + 175 C | Tube | 283 W | Single | 600 V | 2.35 V | 80 A | 250 nA | 20 V | |||
|
GET PRICE |
82
In-stock
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STMicroelectronics | IGBT Transistors Trench gte FieldStop IGBT 600V 80A | Through Hole | TO-3P | + 175 C | Tube | 469 W | Single | 600 V | 1.85 V | 120 A | 250 nA | +/- 20 V | |||
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376
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3P | + 175 C | Tube | 260 W | Single | 650 V | 1.75 V | 30 A | 250 nA | +/- 20 V | |||
|
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268
In-stock
|
STMicroelectronics | IGBT Transistors 600V 20A High Speed Trench Gate IGBT | Through Hole | TO-3P | + 175 C | Tube | 167 W | Single | 600 V | 2.3 V | 40 A | 250 nA | 20 V | |||
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300
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3P | + 175 C | Tube | 168 W | Single | 650 V | 1.55 V | 40 A | 250 nA | 20 V |