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Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage :
19 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGWT60H65DFB
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974
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STMicroelectronics IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT Through Hole TO-3P + 175 C Tube 375 W Single 650 V 1.6 V 80 A 250 nA +/- 20 V
STGWT80V60F
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295
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STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-3P + 175 C Tube 469 W Single 600 V 1.85 V 120 A 250 nA 20 V
STGWT40H65FB
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1,084
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STMicroelectronics IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT Through Hole TO-3P + 175 C Tube 283 W Single 650 V 1.6 V 80 A 250 nA +/- 20 V
STGWT20IH125DF
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490
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STMicroelectronics IGBT Transistors 1250V 20A trench gte field-stop IGBT Through Hole TO-3P + 175 C Tube 259 W Single 1.25 kV 2.55 V 40 A 250 nA 20 V
STGWT40H60DLFB
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RFQ
476
In-stock
STMicroelectronics IGBT Transistors 600V 40A HSpd trench gate field-stop IGBT Through Hole TO-3P + 175 C Tube 283 W Single 600 V 1.6 V 80 A 250 nA +/- 20 V
STGWT30V60DF
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RFQ
289
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STMicroelectronics IGBT Transistors 600V 30A High Speed Trench Gate IGBT Through Hole TO-3P + 175 C Tube 258 W Single 600 V 2.35 V 60 A 250 nA 20 V
STGWT80H65DFB
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RFQ
72
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STMicroelectronics IGBT Transistors Trench gate H series 650V 80A HiSpd Through Hole TO-3P + 175 C Tube 469 W Single 650 V 1.6 V 120 A 250 nA +/- 20 V
STGWT80H65FB
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RFQ
300
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-3P + 175 C Tube 469 W Single 650 V 1.6 V 120 A 250 nA 20 V
STGWT60H60DLFB
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RFQ
573
In-stock
STMicroelectronics IGBT Transistors 600V 60A HSpd trench gate field-stop IGBT Through Hole TO-3P + 175 C Tube 375 W Single 600 V 1.6 V 80 A 250 nA +/- 20 V
STGWT40V60DF
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RFQ
135
In-stock
STMicroelectronics IGBT Transistors 600V 40A High Speed Trench Gate IGBT Through Hole TO-3P + 175 C Tube 283 W Single 600 V 2.35 V 80 A 250 nA 20 V
STGWT60H65FB
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RFQ
495
In-stock
STMicroelectronics IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT Through Hole TO-3P + 175 C Tube 375 W Single 650 V 1.6 V 80 A 250 nA +/- 20 V
STGWT30H60DFB
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RFQ
590
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-3P + 175 C Tube 260 W Single 600 V 1.55 V 60 A 250 nA 20 V
STGWT40H65DFB
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RFQ
429
In-stock
STMicroelectronics IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT Through Hole TO-3P + 175 C Tube 283 W Single 650 V 1.6 V 80 A 250 nA +/- 20 V
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Toshiba IGBT Transistors 600V/30A DIS Through Hole TO-3P + 150 C     Single 600 V   30 A   +/- 20 V
STGWT40V60DLF
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RFQ
294
In-stock
STMicroelectronics IGBT Transistors 600V 40A High Speed Trench Gate IGBT Through Hole TO-3P + 175 C Tube 283 W Single 600 V 2.35 V 80 A 250 nA 20 V
STGWT80V60DF
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RFQ
82
In-stock
STMicroelectronics IGBT Transistors Trench gte FieldStop IGBT 600V 80A Through Hole TO-3P + 175 C Tube 469 W Single 600 V 1.85 V 120 A 250 nA +/- 20 V
STGWT30H65FB
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RFQ
376
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-3P + 175 C Tube 260 W Single 650 V 1.75 V 30 A 250 nA +/- 20 V
STGWT20V60DF
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RFQ
268
In-stock
STMicroelectronics IGBT Transistors 600V 20A High Speed Trench Gate IGBT Through Hole TO-3P + 175 C Tube 167 W Single 600 V 2.3 V 40 A 250 nA 20 V
STGWT20H65FB
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RFQ
300
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-3P + 175 C Tube 168 W Single 650 V 1.55 V 40 A 250 nA 20 V
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