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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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24
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | T-MAX-3 | + 150 C | Tube | 625 W | Single | 1.2 kV | 3.3 V | 113 A | 100 nA | 30 V | ||
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100
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | T-MAX-3 | + 150 C | 1.042 kW | Single | 1.2 kV | 3.3 V | 100 A | 100 nA | 30 V |
