- Pd - Power Dissipation :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
- Applied Filters :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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51
In-stock
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IXYS | IGBT Transistors 1700V/108A High Voltage XPT IGBT | Through Hole | PLUS247-3 | + 175 C | Tube | 937 W | Single | 1700 V | 3 V | 108 A | 100 nA | +/- 20 V | ||||
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49
In-stock
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IXYS | IGBT Transistors 650V/370A Trench IGBT GenX4 XPT | Through Hole | PLUS247-3 | + 175 C | Tube | 1150 W | Single | 650 V | 370 A | 200 nA | 20 V |