- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
- Applied Filters :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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166
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V Field Stop Trench IGBT | Through Hole | TO-3PN-3 | + 175 C | Tube | 231 W | Single | 650 V | 1.33 V | 80 A | +/- 400 nA | +/- 20 V | |||
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375
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V 40A Field Stop Trench IGBT | Through Hole | TO-3PN-3 | + 175 C | Tube | 268 W | Single | 650 V | 1.4 V | 80 A | +/- 400 nA | +/- 20 V | |||
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405
In-stock
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Fairchild Semiconductor | IGBT Transistors FS3 650V SHD prolferation | Through Hole | TO-3PN-3 | + 175 C | Tube | 176 W | Single | 650 V | 1.8 V | 60 A | +/- 400 nA | +/- 20 V | |||
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4,160
In-stock
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Fairchild Semiconductor | IGBT Transistors FORECAST FG | Through Hole | TO-3PN-3 | + 175 C | Tube | 136 W | Single | 1250 V | 2.72 V | 30 A | 500 nA | 25 V | |||
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1
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V 30A FS Planar Gen2 IGBT | Through Hole | TO-3PN-3 | + 175 C | Tube | 300 W | Single | 650 V | 2.29 V | 60 A | 400 nA | +/- 20 V |