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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
BSM75GAR120DN2
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Infineon Technologies IGBT Transistors 1200V 100A GAR CH Screw IS4 (34 mm )-5 + 150 C 625 W Single 1200 V 2.5 V 100 A 400 nA +/- 20 V
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