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Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGH25T120SMD
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RFQ
4,350
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Fairchild Semiconductor IGBT Transistors 1200V, 25A Field Stop Trench IGBT Through Hole TO-247G03-3 + 175 C Tube 428 W Single 1200 V 1.9 V 50 A 400 nA + /- 25 V
FGH40T120SMD_F155
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RFQ
480
In-stock
Fairchild Semiconductor IGBT Transistors 1200V, 40A Field Stop Trench IGBT Through Hole TO-247G03-3 + 175 C Tube 555 W Single 1200 V 2 V 80 A 400 nA + /- 25 V
FGH15T120SMD_F155
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RFQ
420
In-stock
Fairchild Semiconductor IGBT Transistors 1200V, 15A, Field Stop Trench IGBT Through Hole TO-247G03-3 + 175 C Tube 333 W Single 1200 V 1.9 V 30 A 400 nA + /- 25 V
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