IGBT Transistors - Kaimeite

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3 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
NGTG12N60TF1G	GET PRICE	PDF RFQ	200 In-stock	onsemi	IGBT Transistors 600V 12A IGBT TO-3PF	Through Hole	TO-3PF-3L		Tube	54 W		600 V	1.6 V	24 A	100 nA	20 V
NGTB20N60L2TF1G	GET PRICE	PDF RFQ	271 In-stock	onsemi	IGBT Transistors 600V 20A IGBT TO-3PF	Through Hole	TO-3PF-3L	+ 175 C	Tube	64 W	Single	600 V	1.45 V	40 A	100 nA	20 V
NGTG20N60L2TF1G	GET PRICE	PDF RFQ	220 In-stock	onsemi	IGBT Transistors 600V 20A IGBT TO-3PF	Through Hole	TO-3PF-3L		Tube	64 W	Single	600 V	1.65 V	40 A	100 nA	20 V

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