IGBT Transistors - Kaimeite

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9 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	STGW40S120DF3		GET PRICE	PDF RFQ	591 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO247-3	+ 175 C	Tube	468 W	Single	1.2 kV	1.65 V	80 A	250 nA	+/- 20 V
	STGWA40S120DF3		GET PRICE	PDF RFQ	600 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO247-3	+ 175 C	Tube	468 W	Single	1.2 kV	1.65 V	80 A	250 nA	+/- 20 V
	STGWA25S120DF3		GET PRICE	PDF RFQ	200 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO247-3	+ 175 C	Tube	375 W	Single	1.2 kV	1.6 V	50 A	250 nA	+/- 20 V
	STGWA15S120DF3		GET PRICE	PDF RFQ	200 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO247-3	+ 175 C	Tube	259 W	Single	1.2 kV	1.55 V	30 A	250 nA	+/- 20 V
	STGW25S120DF3		GET PRICE	PDF RFQ	180 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO247-3	+ 175 C	Tube	375 W	Single	1.2 kV	1.6 V	50 A	250 nA	+/- 20 V
	STGW15S120DF3		GET PRICE	PDF RFQ	165 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO247-3	+ 175 C	Tube	259 W	Single	1.2 kV	1.55 V	30 A	250 nA	+/- 20 V
	NGTB40N120L3WG		GET PRICE	PDF RFQ	179 In-stock	onsemi	IGBT Transistors IGBT 1200V 40A FS3 LOW	Through Hole	TO247-3	+ 175 C	Tube	454 W	Single	1.2 kV	1.55 V	160 A	200 nA	+/- 20 V
	NGTB40N120FL3WG		GET PRICE	PDF RFQ	194 In-stock	onsemi	IGBT Transistors IGBT 1200V 40A FS3 SOLAR/	Through Hole	TO247-3	+ 175 C	Tube	454 W	Single	1.2 kV	1.7 V	160 A	200 nA	+/- 20 V
	NGTB25N120FL3WG		GET PRICE	PDF RFQ	442 In-stock	onsemi	IGBT Transistors IGBT 1200V 25A FS3 SOLAR/	Through Hole	TO247-3	+ 175 C	Tube	349 W	Single	1.2 kV	1.7 V	100 A	200 nA	+/- 20 V

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