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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGYA120M65DF2
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599
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STMicroelectronics IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 120 A... Through Hole MAX-247-3 + 175 C 625 W Single 650 V 1.65 V 160 A +/- 250 uA +/- 20 V
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