IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	STGFW40V60F	300+ $3.430 600+ $3.080 1200+ $2.590 2700+ $2.470	GET PRICE VIEW	PDF RFQ		STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-3PF	+ 175 C	Tube	62.5 W	Single	600 V	1.8 V	80 A	250 nA	+/- 20 V
	STGFW40V60DF	1+ $4.950 10+ $4.200 25+ $4.130 100+ $3.640		PDF RFQ	216 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-3PF	+ 175 C	Tube	62.5 W	Single	600 V	1.8 V	80 A	250 nA	20 V

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STGFW40V60F

STMicroelectronics

IGBT Transistors IGBT & Power Bipolar

Stock : 0

300+: $3.430

600+: $3.080

1200+: $2.590

2700+: $2.470

GET PRICE

STGFW40V60DF

STGFW40V60DF

STMicroelectronics

IGBT Transistors IGBT & Power Bipolar

Stock : 216

1+: $4.950

10+: $4.200

25+: $4.130

100+: $3.640

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