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Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
SGF5N150UFTU
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188
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Fairchild Semiconductor IGBT Transistors 1500V / 5A Through Hole TO-3PF-3 + 150 C Tube 62.5 W Single 1500 V 4.7 V 10 A +/- 100 nA +/- 20 V
FGAF20N60SMD
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360
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Fairchild Semiconductor IGBT Transistors 600 V 40 A 62.5 W Through Hole TO-3PF + 175 C Tube 62.5 W   600 V 1.9 V 40 A 400 nA 20 V
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600
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-3PF     62.5 W Single 650 V 2 V 80 A 250 nA  
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STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole IPAK-3 + 150 C Tube 62.5 W Single 600 V 1.9 V 15 A 100 nA +/- 20 V
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STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-3PF + 175 C Tube 62.5 W Single 600 V 1.8 V 80 A 250 nA +/- 20 V
STGFW40V60DF
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RFQ
216
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-3PF + 175 C Tube 62.5 W Single 600 V 1.8 V 80 A 250 nA 20 V
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