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Packaging :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
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997
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STMicroelectronics IGBT Transistors IGBT & Power Bipolar SMD/SMT D2PAK + 175 C Reel 115 W Single 600 V 1.6 V 30 A 250 nA +/- 20 V
STGW10M65DF2
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RFQ
1,180
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STMicroelectronics IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A l... Through Hole TO-247-3 + 175 C   115 W Single 650 V 1.55 V 20 A 250 uA +/- 20 V
STGP10H60DF
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RFQ
576
In-stock
STMicroelectronics IGBT Transistors Trench gate H series 600V 10A HiSpd Through Hole TO-220-3 + 175 C Tube 115 W Single 600 V 1.5 V 20 A 250 nA +/- 20 V
STGP15H60DF
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RFQ
274
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STMicroelectronics IGBT Transistors Trench gate H series 600V 15A HiSpd Through Hole TO-220-3 + 175 C Tube 115 W Single 600 V 1.6 V 30 A 250 nA +/- 20 V
NGB8204ANT4G
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RFQ
600
In-stock
Littelfuse IGBT Transistors 18A 400V CLAMP IGBT SMD/SMT D2PAK + 175 C Reel 115 W   430 V   18 A   18 V
NGD18N40ACLBT4G
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RFQ
2,490
In-stock
Littelfuse IGBT Transistors 18A 400V IGBT CLAMP Through Hole DPAK + 175 C Reel 115 W   430 V   15 A   18 V
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RFQ
227
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar SMD/SMT D2PAK + 175 C Reel 115 W Single 600 V 1.5 V 20 A 250 nA +/- 20 V
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