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Package / Case :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IKP15N65H5XKSA1
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552
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Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-220-3 + 175 C Tube 105 W Single 650 V 1.95 V 30 A 100 nA 20 V
IKP15N65F5XKSA1
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RFQ
274
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Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-220-3 + 175 C Tube 105 W Single 650 V 1.9 V 30 A 100 nA 20 V
IXYJ20N120C3D1
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28
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IXYS IGBT Transistors XPT 1200V IGBT GenX7 XPT IGBT Through Hole TO-247-3 + 150 C Tube 105 W Single 1200 V 4 V 21 A 100 nA 30 V
IKP15N65H5
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Infineon Technologies IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP... Through Hole TO-220-3 + 175 C   105 W Single 650 V 1.95 V 30 A 100 nA 20 V
IKP15N65F5
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RFQ
Infineon Technologies IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP... Through Hole TO-220-3 + 175 C   105 W Single 650 V 1.9 V 30 A 100 nA 20 V
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