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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGF10NC60KD
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1,936
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STMicroelectronics IGBT Transistors PowerMESH" IGBT Through Hole TO-220-3 FP + 150 C Tube 25 W Single 600 V 2 V 100 nA +/- 20 V
STGP10NC60KD
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1,385
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STMicroelectronics IGBT Transistors PowerMESH" IGBT Through Hole TO-220-3 + 150 C Tube 25 W Single 600 V 2 V 100 nA +/- 20 V
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