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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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STMicroelectronics | IGBT Transistors PowerMESH" IGBT | Through Hole | TO-220-3 FP | + 150 C | Tube | 20 W | Single | 600 V | 1.9 V | 100 nA | +/- 20 V |
