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5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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5,000
In-stock
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STMicroelectronics | IGBT Transistors N-CHANNEL IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 220 W | Single | 1200 V | 2.75 V | +/- 100 nA | +/- 25 V | ||||
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275
In-stock
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Infineon Technologies | IGBT Transistors 600V Warp2 150kHz | Through Hole | TO-247-3 | Tube | 220 W | Single | 600 V | 2.35 V | 40 A | +/- 20 V | |||||
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35
In-stock
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IXYS | IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A | SMD/SMT | TO-263-3 | + 150 C | Tube | 220 W | 600 V | 2.6 V | 60 A | 100 nA | +/- 20 V | ||||
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20
In-stock
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IXYS | IGBT Transistors 30 Amps 600V | Through Hole | TO-220AB-3 | + 150 C | Tube | 220 W | Single | 600 V | 2.6 V | 60 A | 100 nA | +/- 20 V | |||
|
GET PRICE |
36
In-stock
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IXYS | IGBT Transistors 30 Amps 600V | Through Hole | TO-220AB-3 | + 150 C | Tube | 220 W | 600 V | 2.6 V | 60 A | 100 nA | +/- 20 V |