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Package / Case :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTG12N60TF1G
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RFQ
200
In-stock
onsemi IGBT Transistors 600V 12A IGBT TO-3PF Through Hole TO-3PF-3L   Tube 54 W   600 V 1.6 V 24 A 100 nA 20 V
NGTB15N60R2FG
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RFQ
152
In-stock
onsemi IGBT Transistors RC2 IGBT 15A 600V Through Hole TO-220-3 + 175 C Tube 54 W Single 600 V 1.85 V 24 A +/- 100 nA +/- 20 V
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