IGBT Transistors - Kaimeite

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9 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IRGB4620DPBF		GET PRICE	PDF RFQ	539 In-stock	Infineon Technologies	IGBT Transistors 600V TRENCH IGBT ULTRAFAST	Through Hole	TO-220AB-3	+ 175 C	Tube	140 W	Single	600 V	1.97 V	32 A	100 nA	+/- 20 V
	IRGB4056DPBF		GET PRICE	PDF RFQ	493 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast Trench IGBT	Through Hole	TO-220AB-3	+ 175 C	Tube	140 W	Single	600 V	1.55 V	24 A	100 nA	+/- 20 V
	IRGS4056DPBF		GET PRICE	PDF RFQ	488 In-stock	Infineon Technologies	IGBT Transistors 600V Low VCEon	SMD/SMT	TO-263-3		Tube	140 W	Single	600 V	1.85 V	42 A		+/- 20 V
	IXBT10N170		GET PRICE	PDF RFQ	35 In-stock	IXYS	IGBT Transistors 10 Amps 1700V 2.3 Rds	SMD/SMT	TO-268-3	+ 150 C	Tube	140 W	Single	1.7 kV	3.4 V	20 A	100 nA	+/- 20 V
	IXDP20N60BD1		GET PRICE	PDF RFQ	50 In-stock	IXYS	IGBT Transistors 20 Amps 600V	Through Hole	TO-220-3	+ 150 C	Tube	140 W	Single	600 V	2.2 V	32 A	500 nA	+/- 20 V
	IXDP20N60B		GET PRICE	PDF RFQ	49 In-stock	IXYS	IGBT Transistors 20 Amps 600V	Through Hole	TO-220-3	+ 150 C	Tube	140 W	Single	600 V	2.2 V	32 A	500 nA	+/- 20 V
	IXGT10N170A		GET PRICE	PDF RFQ	11 In-stock	IXYS	IGBT Transistors 20 Amps 1700 V 7 V Rds	SMD/SMT	TO-268-3	+ 150 C	Tube	140 W	Single	1.7 kV	4.5 V	10 A	100 nA	+/- 20 V
	IRGP4620DPBF		GET PRICE	PDF RFQ	90 In-stock	IR / Infineon	IGBT Transistors 600V TRENCH IGBT ULTRAFAST	Through Hole	TO-247AC-3	+ 175 C	Tube	140 W	Single	600 V	1.97 V	32 A	100 nA	+/- 20 V
	IRGS4620DPBF		GET PRICE	PDF RFQ	37 In-stock	IR / Infineon	IGBT Transistors 600V TRENCH ULTRAFAST IGBT	SMD/SMT	TO-263-3	+ 175 C	Tube	140 W	Single	600 V	1.55 V	32 A	+/- 100 nA	+/- 30 V

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