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Maximum Operating Temperature :
Packaging :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGFW20V60F
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RFQ
870
In-stock
STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop Through Hole TO-3PF-3 + 175 C Tube 52 W Single 600 V 2.3 V 40 A 250 nA 20 V
IRGR3B60KD2TRP
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RFQ
1,807
In-stock
IR / Infineon IGBT Transistors IGBT DISCRETES SMD/SMT DPAK-3 + 150 C Reel 52 W Single 600 V 1.9 V 7.8 A 100 nA +/- 20 V
IRGIB15B60KD1P
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RFQ
306
In-stock
Infineon Technologies IGBT Transistors 600V Low-Vceon Through Hole TO-220FP-3   Tube 52 W Single 600 V 1.8 V 19 A   +/- 20 V
IRGR3B60KD2PBF
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RFQ
182
In-stock
IR / Infineon IGBT Transistors 600V Non Punch Thru Short Cir Ratd IGBT SMD/SMT DPAK-3   Tube 52 W Single 600 V 2.4 V 7.8 A   +/- 20 V
STGFW20H65FB
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RFQ
290
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-3PF + 175 C Tube 52 W Single 650 V 1.55 V 40 A 250 nA 20 V
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RFQ
278
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-3PF + 175 C Tube 52 W Single 600 V 1.8 V 40 A 250 nA +/- 20 V
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