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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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870
In-stock
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STMicroelectronics | IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop | Through Hole | TO-3PF-3 | + 175 C | Tube | 52 W | Single | 600 V | 2.3 V | 40 A | 250 nA | 20 V | |||
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1,807
In-stock
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IR / Infineon | IGBT Transistors IGBT DISCRETES | SMD/SMT | DPAK-3 | + 150 C | Reel | 52 W | Single | 600 V | 1.9 V | 7.8 A | 100 nA | +/- 20 V | |||
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306
In-stock
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Infineon Technologies | IGBT Transistors 600V Low-Vceon | Through Hole | TO-220FP-3 | Tube | 52 W | Single | 600 V | 1.8 V | 19 A | +/- 20 V | |||||
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182
In-stock
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IR / Infineon | IGBT Transistors 600V Non Punch Thru Short Cir Ratd IGBT | SMD/SMT | DPAK-3 | Tube | 52 W | Single | 600 V | 2.4 V | 7.8 A | +/- 20 V | |||||
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290
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3PF | + 175 C | Tube | 52 W | Single | 650 V | 1.55 V | 40 A | 250 nA | 20 V | |||
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278
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3PF | + 175 C | Tube | 52 W | Single | 600 V | 1.8 V | 40 A | 250 nA | +/- 20 V |