- Mounting Style :
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16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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599
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 120 A... | Through Hole | MAX-247-3 | + 175 C | 625 W | Single | 650 V | 1.65 V | 160 A | +/- 250 uA | +/- 20 V | ||||
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166
In-stock
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IXYS | IGBT Transistors | Through Hole | TO-264-3 | + 150 C | Tube | 625 W | Single | 3 kV | 2.7 V | 130 A | +/- 200 nA | +/- 25 V | |||
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180
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 1200 V | 4.2 V | 90 A | 100 nA | 30 V | |||
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204
In-stock
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IXYS | IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT | Through Hole | TO-247AD-3 | + 175 C | Tube | 625 W | Single | 650 V | 1.65 V | 160 A | 100 nA | 20 V | |||
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75
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 175 C | 625 W | Single | 600 V | 1.5 V | 229 A | 600 nA | 30 V | ||||
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230
In-stock
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IR / Infineon | IGBT Transistors DISCRETES | Through Hole | TO-247-3 | + 175 C | Tube | 625 W | Single | 600 V | 3 V | 62 A | +/- 100 nA | +/- 20 V | |||
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22
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 1.2 kV | 3.3 V | 100 A | 100 nA | 30 V | |||
|
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118
In-stock
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IXYS | IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT | Through Hole | TO-247AD-3 | + 175 C | Tube | 625 W | Single | 650 V | 1.65 V | 160 A | 100 nA | 20 V | |||
|
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28
In-stock
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IXYS | IGBT Transistors XPT IGBT C3-Class 1200V/105A | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 1200 V | 2.5 V | 105 A | 100 nA | 30 V | |||
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24
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | T-MAX-3 | + 150 C | Tube | 625 W | Single | 1.2 kV | 3.3 V | 113 A | 100 nA | 30 V | |||
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22
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | SMD/SMT | TO-264-3 | + 150 C | Tube | 625 W | Single | 600 V | 2 V | 143 A | 100 nA | 30 V | |||
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11
In-stock
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IXYS | IGBT Transistors 75 Amps 1700V 6.00 Rds | SMD/SMT | SOT-227B-4 | + 150 C | Tube | 625 W | Single | 1.7 kV | 4.95 V | 75 A | 100 nA | +/- 20 V | |||
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16
In-stock
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IXYS | IGBT Transistors SMPD IGBTs Power Device | SMD/SMT | SMDP-21 | + 175 C | Tube | 625 W | Single | 223 A | 200 nA | ||||||
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13
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 600 V | 2 V | 143 A | 100 nA | 30 V | |||
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3,000
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT SMPS Series | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 600 V | 1.7 V | 75 A | +/- 250 nA | +/- 20 V | |||
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36
In-stock
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Infineon Technologies | IGBT Transistors 1200V 100A GAR CH | Screw | IS4 (34 mm )-5 | + 150 C | 625 W | Single | 1200 V | 2.5 V | 100 A | 400 nA | +/- 20 V |