1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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11
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STMicroelectronics | IGBT Transistors 50A 600V FST IGBT Ultrafast Diode | Through Hole | TO-247 | + 150 C | Tube | 360 W | 1.8 V | 100 A | 250 nA | +/- 20 V |
