IGBT Transistors - Kaimeite

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7 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
HGTG18N120BND	GET PRICE	PDF RFQ	220 In-stock	Fairchild Semiconductor	IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde	Through Hole	TO-247-3	+ 150 C	Tube	390 W	Single	1200 V	2.45 V	54 A	+/- 250 nA	+/- 20 V
AUIRGP50B60PD1E	GET PRICE	PDF RFQ	162 In-stock	IR / Infineon	IGBT Transistors 600V AUTO WARP2 150KHZ COPACK IGBT	Through Hole	TO-247-3		Tube	390 W	Single	600 V	2.35 V	75 A		+/- 20 V
IRGP50B60PD1PBF	GET PRICE	PDF RFQ	1,090 In-stock	Infineon Technologies	IGBT Transistors 600V Warp2 150kHz	Through Hole	TO-247-3		Tube	390 W	Single	600 V	2.35 V	75 A		+/- 20 V
AUIRGP50B60PD1	GET PRICE	PDF RFQ	42 In-stock	Infineon Technologies	IGBT Transistors 600V AUTO WARP2 150KHZ COPACK IGBT	Through Hole	TO-247-3		Tube	390 W	Single	600 V	2.35 V	75 A		+/- 20 V
IRG7PH46UDPBF	GET PRICE	PDF RFQ	50 In-stock	Infineon Technologies	IGBT Transistors 1200V 108A	Through Hole	TO-247-3		Tube	390 W	Single	1.2 kV	2 V	108 A		+/- 30 V
IRG7PH46UD-EP	GET PRICE	PDF RFQ	12 In-stock	Infineon Technologies	IGBT Transistors IGBT DISCRETES	Through Hole	TO-247-3		Tube	390 W		1.2 kV	2 V	108 A
IRGP50B60PD1-EP	GET PRICE VIEW	PDF RFQ		Infineon Technologies	IGBT Transistors 600V Warp2 150kHz	Through Hole	TO-247AD-3		Tube	390 W	Single	600 V	2 V	75 A		+/- 20 V

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