IGBT Transistors - Kaimeite

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3 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IKW40T120FKSA1	GET PRICE	PDF RFQ	240 In-stock	Infineon Technologies	IGBT Transistors LOW LOSS DuoPack 1200V 40A	Through Hole	TO-247-3	+ 150 C	Tube	270 W	Single	1200 V	2.3 V	75 A	600 nA	20 V
IKW40T120XK	GET PRICE	PDF RFQ	240 In-stock	Infineon Technologies	IGBT Transistors LOW LOSS DuoPack 1200V 40A	Through Hole	TO-247-3	+ 150 C	Tube	270 W	Single	1200 V	2.3 V	75 A	600 nA	20 V
IKW40T120	GET PRICE	PDF RFQ	13,500 In-stock	Infineon Technologies	IGBT Transistors LOW LOSS DuoPack 1200V 40A	Through Hole	TO-247-3	+ 150 C	Tube	270 W	Single	1200 V	2.3 V	75 A	600 nA	20 V

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