IGBT Transistors - Kaimeite

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5 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IRGPS40B120UDP	GET PRICE	PDF RFQ	79 In-stock	Infineon Technologies	IGBT Transistors 1200V UltraFast 5-40kHz	Through Hole	TO-274AA-3		Tube	595 W	Single	1.2 kV	3.5 V	80 A		+/- 20 V
NGTB60N65FL2WG	GET PRICE	PDF RFQ	116 In-stock	onsemi	IGBT Transistors 650V/60A FAST IGBT FSII	Through Hole	TO-247-3	+ 175 C	Tube	595 W	Single	650 V	1.64 V	100 A	200 nA	+/- 20 V
NGTB75N60SWG	GET PRICE	PDF RFQ	46 In-stock	onsemi	IGBT Transistors FSII 75A 600V Welding	Through Hole	TO-247-3	+ 175 C	Tube	595 W	Single	600 V	1.7 V	100 A	200 nA	+/- 20 V
IRGPS60B120KDP	GET PRICE	PDF RFQ	200 In-stock	IR / Infineon	IGBT Transistors 1200V UltraFast 5-40kHz	Through Hole	TO-274-3	+ 150 C	Tube	595 W	Single	1.2 kV	2.33 V	105 A	100 nA	+/- 20 V
IRGPS40B120UPBF	GET PRICE	PDF RFQ	100 In-stock	Infineon Technologies	IGBT Transistors 1200V UltraFast 8-25kHz Single IGBT	Through Hole	TO-274AA-3		Tube	595 W	Single	1.2 kV	3.5 V	80 A		+/- 20 V

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