IGBT Transistors - Kaimeite

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4 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXGH60N60C3	GET PRICE	PDF RFQ	143 In-stock	IXYS	IGBT Transistors GenX3 600V IGBT	Through Hole	TO-247AD-3	+ 150 C	Tube	380 W	Single	600 V	2.2 V	75 A	100 nA	+/- 20 V
IXGH40N120B2D1	GET PRICE	PDF RFQ	34 In-stock	IXYS	IGBT Transistors IGBT, Diode 1200V, 75A	Through Hole	TO-247-3	+ 150 C	Tube	380 W	Single	1.2 kV	2.9 V	75 A	100 nA	+/- 20 V
IXGH40N120C3D1	GET PRICE	PDF RFQ	27 In-stock	IXYS	IGBT Transistors 75Amps 1200V	Through Hole	TO-247-3	+ 150 C	Tube	380 W		1.2 kV	4.4 V	75 A	100 nA	+/- 20 V
IXXH60N65B4H1	GET PRICE	PDF RFQ	26 In-stock	IXYS	IGBT Transistors 650V/106A TRENCH IGBT GENX4 XPT	Through Hole	TO-247AD-3	+ 175 C	Tube	380 W	Single	650 V	1.7 V	116 A	100 nA	20 V

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