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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IKW75N65ES5
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RFQ
13,012
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Infineon Technologies IGBT Transistors Trenchstop 5 IGBT Through Hole TO-247-3 + 175 C   395 W Single 650 V 1.65 V 80 A 100 nA 4.8 V
IKW75N65ES5XKSA1
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RFQ
2,400
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Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 395 W Single 650 V 1.65 V 80 A 100 nA 4.8 V
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