IGBT Transistors - Kaimeite

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7 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IKW25T120FKSA1	GET PRICE	PDF RFQ	230 In-stock	Infineon Technologies	IGBT Transistors LOW LOSS DuoPack 1200V 25A	Through Hole	TO-247-3	+ 150 C	Tube	190 W	Single	1200 V	2.2 V	50 A	600 nA	20 V
IKW25T120	GET PRICE	PDF RFQ	74 In-stock	Infineon Technologies	IGBT Transistors LOW LOSS DuoPack 1200V 25A	Through Hole	TO-247-3	+ 150 C	Tube	190 W	Single	1200 V	2.2 V	50 A	600 nA	20 V
IXGH28N60B3D1	GET PRICE	PDF RFQ	61 In-stock	IXYS	IGBT Transistors 28 Amps 600V	Through Hole	TO-247	+ 150 C	Tube	190 W	Single	600 V	1.5 V	66 A	+/- 100 nA
IXGT16N170	GET PRICE	PDF RFQ	30 In-stock	IXYS	IGBT Transistors 32 Amps 1700 V 3.5 V Rds	SMD/SMT	TO-268-3	+ 150 C	Tube	190 W	Single	1.7 kV	2.7 V	32 A	100 nA	+/- 20 V
IXGH16N170	GET PRICE	PDF RFQ	23 In-stock	IXYS	IGBT Transistors 32 Amps 1700 V 3.5 V Rds	Through Hole	TO-247-3	+ 150 C	Tube	190 W	Single	1.7 kV	2.7 V	32 A	100 nA	+/- 20 V
IXGT16N170A	GET PRICE	PDF RFQ	7 In-stock	IXYS	IGBT Transistors 32 Amps 1700 V 5 V Rds	SMD/SMT	TO-268-3	+ 150 C	Tube	190 W	Single	1.7 kV	4.2 V	16 A	100 nA	+/- 20 V
IXGH16N170A	GET PRICE	PDF RFQ	30 In-stock	IXYS	IGBT Transistors 32 Amps 1700 V 5 V Rds	Through Hole	TO-247-3	+ 150 C	Tube	190 W	Single	1.7 kV	4.2 V	16 A	100 nA	+/- 20 V

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