2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 428 W | Single | 600 V | 2.25 V | 80 A | 100 nA | 5.7 V | |||
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VIEW | Infineon Technologies | IGBT Transistors IGBT PRODUCTS TrenchStop | Through Hole | TO-247-3 | + 175 C | Tube | 428 W | Single | 600 V | 2.25 V | 80 A | 100 nA | 5.7 V |
