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Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGH25T120SMD
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RFQ
4,350
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Fairchild Semiconductor IGBT Transistors 1200V, 25A Field Stop Trench IGBT Through Hole TO-247G03-3 + 175 C Tube 428 W Single 1200 V 1.9 V 50 A 400 nA + /- 25 V
K75T60
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RFQ
17,800
In-stock
Infineon Technologies IGBT Transistors 600V 75A 100nA Through Hole TO-247-3 + 175 C Tube 428 W Single 600 V 1.9 V 80 A 100 nA 5.7 V
IGW75N60T
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RFQ
233
In-stock
Infineon Technologies IGBT Transistors LOW LOSS IGBT TECH 600V 75A Through Hole TO-247-3 + 175 C Tube 428 W Single 600 V 1.9 V 150 A 100 nA 20 V
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RFQ
240
In-stock
Infineon Technologies IGBT Transistors LOW LOSS IGBT TECH 600V 75A Through Hole TO-247-3 + 175 C Tube 428 W Single 600 V 1.9 V 150 A 100 nA 20 V
IKW75N60T
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RFQ
27,100
In-stock
Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 75A Through Hole TO-247-3 + 175 C Tube 428 W Single 600 V 1.9 V 80 A 100 nA 5.7 V
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