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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IGW75N60T
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233
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Infineon Technologies IGBT Transistors LOW LOSS IGBT TECH 600V 75A Through Hole TO-247-3 + 175 C Tube 428 W Single 600 V 1.9 V 150 A 100 nA 20 V
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RFQ
240
In-stock
Infineon Technologies IGBT Transistors LOW LOSS IGBT TECH 600V 75A Through Hole TO-247-3 + 175 C Tube 428 W Single 600 V 1.9 V 150 A 100 nA 20 V
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