IGBT Transistors - Kaimeite

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3 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IRGB4061DPBF	GET PRICE	PDF RFQ	410 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast Trench IGBT	Through Hole	TO-220AB-3	+ 175 C	Tube	206 W	Single	600 V	1.95 V	36 A		+/- 20 V
IRGB4630DPBF	GET PRICE	PDF RFQ	198 In-stock	Infineon Technologies	IGBT Transistors 600V TRENCH IGBT ULTRAFAST	Through Hole	TO-220AB-3	+ 175 C	Tube	206 W	Single	600 V	2.15 V	47 A	100 nA	+/- 20 V
IRGP4630DPBF	GET PRICE	PDF RFQ	2 In-stock	IR / Infineon	IGBT Transistors 600V TRENCH IGBT ULTRAFAST	Through Hole	TO-247AC-3	+ 175 C	Tube	206 W	Single	600 V	2.15 V	47 A	100 nA	+/- 20 V

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