IGBT Transistors - Kaimeite

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4 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
K40H603	GET PRICE	PDF RFQ	3,620 In-stock	Infineon Technologies	IGBT Transistors 600V 40A 306W	Through Hole	TO-247-3	+ 150 C	Tube	306 W		600 V	1.95 V	80 A	100 nA	20 V
IGW40N60H3	GET PRICE	PDF RFQ	190 In-stock	Infineon Technologies	IGBT Transistors 600V 40A 306W	Through Hole	TO-247	+ 150 C	Tube	306 W		600 V	1.95 V	80 A	100 nA	20 V
IRGP6650DPBF	GET PRICE	PDF RFQ	37 In-stock	IR / Infineon	IGBT Transistors 600V UltraFast IGBT TO-247	Through Hole	TO-247AC-3	+ 175 C	Tube	306 W	Single	600 V	1.65 V	80 A	100 nA	20 V
IRGP6650D-EPBF	GET PRICE	PDF RFQ	40 In-stock	IR / Infineon	IGBT Transistors 600V UltraFast IGBT TO-247	Through Hole	TO-247AD-3	+ 175 C	Tube	306 W	Single	600 V	1.65 V	80 A	100 nA	20 V

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