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Package / Case :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
K40H603
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RFQ
3,620
In-stock
Infineon Technologies IGBT Transistors 600V 40A 306W Through Hole TO-247-3 + 150 C Tube 306 W 600 V 1.95 V 80 A 100 nA 20 V
IGW40N60H3
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RFQ
190
In-stock
Infineon Technologies IGBT Transistors 600V 40A 306W Through Hole TO-247 + 150 C Tube 306 W 600 V 1.95 V 80 A 100 nA 20 V
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