- Package / Case :
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14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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10,144
In-stock
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Fairchild Semiconductor | IGBT Transistors 650 V 80 A 268 W | Through Hole | TO-247 | + 175 C | Tube | 268 W | 650 V | 2.1 V | 80 A | 400 nA | 20 V | ||||
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176
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS4 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 650 V | 1.6 V | 100 A | +/- 400 nA | +/- 20 V | |||
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2,599
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 650 V | 1.6 V | 80 A | +/- 400 nA | +/- 20 V | |||
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532
In-stock
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Infineon Technologies | IGBT Transistors 600V 76A | Through Hole | TO-247-3 | Tube | 268 W | Single | 600 V | 1.85 V | 76 A | +/- 20 V | |||||
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338
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 650 V | 1.45 V | 80 A | 400 nA | 30 V | |||
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401
In-stock
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Fairchild Semiconductor | IGBT Transistors FS3 650V SHD prolferation | Through Hole | TO-3PN | + 175 C | Tube | 268 W | Single | 650 V | 2.28 V | 100 A | +/- 400 nA | +/- 30 V | |||
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408
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 700 V | 2.37 V | 80 A | +/- 400 nA | +/- 20 V | |||
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351
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 268 W | 650 V | 1.81 V | 80 A | 400 nA | 30 V | ||||
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185
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 268 W | 650 V | 2.14 V | 80 A | 400 nA | 30 V | ||||
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375
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V 40A Field Stop Trench IGBT | Through Hole | TO-3PN-3 | + 175 C | Tube | 268 W | Single | 650 V | 1.4 V | 80 A | +/- 400 nA | +/- 20 V | |||
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144
In-stock
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Infineon Technologies | IGBT Transistors 600V Low VCEon Trench IGBT | Through Hole | TO-247AD-3 | Tube | 268 W | 600 V | 1.85 V | 76 A | 100 nA | 20 V | |||||
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122
In-stock
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onsemi | IGBT Transistors 1200V/40 FAST IGBT FSII T | Through Hole | TO-247-4 | - 55 C | Tube | 268 W | Single | 1200 V | 160 A | 200 nA | 30 V | ||||
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30
In-stock
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onsemi | IGBT Transistors 1200V/50 FAST IGBT FSII T | Through Hole | TO-247-4 | + 175 C | Tube | 268 W | 1200 V | 2.8 V | 200 A | 200 nA | 20 V | ||||
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71
In-stock
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IR / Infineon | IGBT Transistors 600V 76A | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 600 V | 1.6 V | 76 A | 100 nA | +/- 20 V |