IGBT Transistors - Kaimeite

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9 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IRGP4066DPBF		GET PRICE	PDF RFQ	4,060 In-stock	IR / Infineon	IGBT Transistors 600V UltraFast Trench IGBT	Through Hole	TO-247-3		Tube	454 W	Single	600 V	2.1 V	140 A		+/- 20 V
	IRGP4066PBF		GET PRICE	PDF RFQ	178 In-stock	Infineon Technologies	IGBT Transistors 600V Low VCEon Trench IGBT	Through Hole	TO-247-3		Tube	454 W	Single	600 V	2.1 V	140 A		+/- 20 V
	AUIRGP4066D1		GET PRICE	PDF RFQ	35 In-stock	IR / Infineon	IGBT Transistors 600V co-pack Auto Trench IGBT	Through Hole	TO-247-3		Tube	454 W		600 V	2.1 V	140 A	100 nA	20 V
	AUIRGP4066D1-E		GET PRICE	PDF RFQ	70 In-stock	IR / Infineon	IGBT Transistors 600V co-pack Auto Trench IGBT	Through Hole	TO-247-3		Tube	454 W		600 V	2.1 V	140 A	100 nA	20 V
	NGTB40N120L3WG		GET PRICE	PDF RFQ	179 In-stock	onsemi	IGBT Transistors IGBT 1200V 40A FS3 LOW	Through Hole	TO247-3	+ 175 C	Tube	454 W	Single	1.2 kV	1.55 V	160 A	200 nA	+/- 20 V
	NGTB40N120FL3WG		GET PRICE	PDF RFQ	194 In-stock	onsemi	IGBT Transistors IGBT 1200V 40A FS3 SOLAR/	Through Hole	TO247-3	+ 175 C	Tube	454 W	Single	1.2 kV	1.7 V	160 A	200 nA	+/- 20 V
	NGTB40N120S3WG		GET PRICE	PDF RFQ	260 In-stock	onsemi	IGBT Transistors IGBT 1200V 40A FS3 LOW VF	Through Hole	TO-247-3	+ 175 C	Tube	454 W	Single	1.2 kV	2.3 V	160 A	200 nA	+/- 20 V
	GP4066D-E		GET PRICE	PDF RFQ	1,740 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast Trench IGBT	Through Hole	TO-247AD-3		Tube	454 W	Single	600 V	2.1 V	140 A		+/- 20 V
	IRGP4066-EPBF		GET PRICE	PDF RFQ	104 In-stock	IR / Infineon	IGBT Transistors 600V Low VCEon Trench IGBT	Through Hole	TO-247AD-3		Tube	454 W	Single	600 V	2.1 V	140 A		+/- 20 V

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