Build a global manufacturer and supplier trusted trading platform.
Package / Case :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGW20H65FB
GET PRICE
RFQ
598
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-247-3 + 175 C Tube 168 W Single 650 V 1.55 V 40 A 250 nA 20 V
STGWT20H65FB
GET PRICE
RFQ
300
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-3P + 175 C Tube 168 W Single 650 V 1.55 V 40 A 250 nA 20 V
Page 1 / 1