IGBT Transistors - Kaimeite

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8 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	STGWT20IH125DF		GET PRICE	PDF RFQ	490 In-stock	STMicroelectronics	IGBT Transistors 1250V 20A trench gte field-stop IGBT	Through Hole	TO-3P	+ 175 C	Tube	259 W	Single	1.25 kV	2.55 V	40 A	250 nA	20 V
	STGWA15S120DF3		GET PRICE	PDF RFQ	200 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO247-3	+ 175 C	Tube	259 W	Single	1.2 kV	1.55 V	30 A	250 nA	+/- 20 V
	STGW15S120DF3		GET PRICE	PDF RFQ	165 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO247-3	+ 175 C	Tube	259 W	Single	1.2 kV	1.55 V	30 A	250 nA	+/- 20 V
	STGW20IH125DF		GET PRICE	PDF RFQ	50 In-stock	STMicroelectronics	IGBT Transistors 1250V 20A trench gate field-stop IGBT	Through Hole	TO-247-3	+ 175 C	Tube	259 W	Single	1.25 kV	2.55 V	40 A	250 nA	20 V
	STGWA15H120F2		GET PRICE	PDF RFQ	600 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole		+ 175 C		259 W	Single	1200 V	2.5 V	30 A	+/- 250 nA	20 V
	STGWA15H120DF2		GET PRICE	PDF RFQ	600 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole		+ 175 C		259 W	Single	1200 V	2.5 V	30 A	+/- 250 nA	20 V
	STGW15H120F2		GET PRICE	PDF RFQ	2,000 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-247-3	+ 175 C	Tube	259 W	Single	1200 V	2.1 V	30 A	250 nA	20 V
	STGW15H120DF2		GET PRICE	PDF RFQ	398 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-247-3	+ 175 C	Tube	259 W	Single	1200 V	2.1 V	30 A	250 nA	20 V

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