IGBT Transistors - Kaimeite

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5 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
STGW30M65DF2	GET PRICE	PDF RFQ	553 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A l...	Through Hole	TO-247-3	+ 175 C		258 W	Single	650 V	1.55 V	60 A	+ / - 250 nA	+/- 20 V
STGW30V60DF	GET PRICE	PDF RFQ	412 In-stock	STMicroelectronics	IGBT Transistors 600V 30A High Speed Trench Gate IGBT	Through Hole	TO-247	+ 175 C	Tube	258 W	Single	600 V	2.35 V	60 A	250 nA	20 V
STGWT30V60DF	GET PRICE	PDF RFQ	289 In-stock	STMicroelectronics	IGBT Transistors 600V 30A High Speed Trench Gate IGBT	Through Hole	TO-3P	+ 175 C	Tube	258 W	Single	600 V	2.35 V	60 A	250 nA	20 V
STGP30V60DF	GET PRICE	PDF RFQ	426 In-stock	STMicroelectronics	IGBT Transistors 600V 30A High Speed Trench Gate IGBT	Through Hole	TO-220	+ 175 C	Tube	258 W	Single	600 V	2.35 V	60 A	250 nA	20 V
STGB30V60DF	GET PRICE	PDF RFQ	835 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	SMD/SMT	D2PAK-3	+ 175 C	Reel	258 W	Single	600 V	1.85 V	60 A	250 nA	20 V

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