IGBT Transistors - Kaimeite

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9 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	STGW40H120DF2		GET PRICE	PDF RFQ	492 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-247-3	+ 175 C	Tube	468 W	Single	1200 V	2.1 V	80 A	250 nA	20 V
	STGW40S120DF3		GET PRICE	PDF RFQ	591 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO247-3	+ 175 C	Tube	468 W	Single	1.2 kV	1.65 V	80 A	250 nA	+/- 20 V
	STGWA40S120DF3		GET PRICE	PDF RFQ	600 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO247-3	+ 175 C	Tube	468 W	Single	1.2 kV	1.65 V	80 A	250 nA	+/- 20 V
	STGW40H120F2		GET PRICE	PDF RFQ	1,043 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-247-3	+ 175 C	Tube	468 W	Single	1200 V	2.1 V	80 A	250 nA	20 V
	STGWA40H120DF2		GET PRICE	PDF RFQ	11,800 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-247-3	+ 175 C		468 W	Single	1.2 kV	2.5 V	80 A	250 nA	20 V
	STGW75M65DF2		GET PRICE	PDF RFQ	6,000 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT M series, 650 V 75 A l...	Through Hole	TO-247-3	+ 175 C		468 W	Single	650 V	1.65 V	120 A	+/- 250 uA	+/- 20 V
	STGWA40H120F2		GET PRICE VIEW	PDF RFQ		STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole		+ 175 C		468 W	Single	1200 V	2.5 V	80 A	250 nA	+/- 20 V
	STGW40M120DF3		GET PRICE VIEW	PDF RFQ		STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-247-3	+ 175 C	Tube	468 W	Single	1200 V	1.85 V	80 A	250 nA	20 V
	STGWA40M120DF3		GET PRICE	PDF RFQ	288 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-247-3	+ 175 C	Tube	468 W	Single	1200 V	1.85 V	80 A	250 nA	20 V

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