IGBT Transistors - Kaimeite

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5 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IKW40N65F5AXKSA1	GET PRICE	PDF RFQ	240 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-247-3	+ 175 C	Tube	255 W	Single	650 V	1.9 V	74 A	100 nA	20 V
IKP40N65F5XKSA1	GET PRICE	PDF RFQ	396 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-220-3	+ 175 C	Tube	255 W	Single	650 V	1.9 V	74 A	100 nA	20 V
IKW40N65F5FKSA1	GET PRICE	PDF RFQ	480 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-247-3	+ 175 C	Tube	255 W	Single	650 V	1.9 V	74 A	100 nA	20 V
IKW40N65F5	GET PRICE VIEW	PDF RFQ		Infineon Technologies	IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP...	Through Hole	TO-247-3	+ 175 C		255 W	Single	650 V	1.9 V	74 A	100 nA	20 V
IKP40N65F5	GET PRICE VIEW	PDF RFQ		Infineon Technologies	IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP...	Through Hole	TO-220-3	+ 175 C		255 W	Single	650 V	1.9 V	74 A	100 nA	20 V

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