IGBT Transistors - Kaimeite

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4 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
FGP10N60UNDF	GET PRICE	PDF RFQ	481 In-stock	Fairchild Semiconductor	IGBT Transistors 600V 10A NPT IGBT	Through Hole	TO-220-3	+ 150 C	Tube	139 W	Single	600 V	2.3 V	10 A	+/- 10 uA	+/- 20 V
IRGB15B60KDPBF	GET PRICE	PDF RFQ	346 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast 10-30kHz	Through Hole	TO-220-3		Tube	139 W	Single	600 V	2.2 V	31 A		+/- 20 V
IRGSL15B60KDPBF	GET PRICE	PDF RFQ	250 In-stock	Infineon Technologies	IGBT Transistors IGBT DISCRETES	Through Hole	TO-262-3	+ 150 C	Tube	139 W	Single	600 V	2.2 V	31 A		+/- 20 V
IRGS15B60KDPBF	GET PRICE VIEW	PDF RFQ		Infineon Technologies	IGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT	SMD/SMT	D-PAK-3	+ 150 C	Tube	139 W	Single	600 V	2.2 V	31 A	100 nA	+/- 20 V

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