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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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31
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-247-3 | + 150 C | 223 W | Single | 900 V | 2.5 V | 48 A | 100 nA | 30 V | ||||
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185
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onsemi | IGBT Transistors 600V/50A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 223 W | Single | 600 V | 1.45 V | 100 A | 200 nA | 30 V | |||
|
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146
In-stock
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onsemi | IGBT Transistors 600V/50A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 223 W | Single | 600 V | 1.45 V | 100 A | 200 nA | 30 V | |||
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VIEW | IXYS | IGBT Transistors 42 Amps 300V | Through Hole | TO-247-3 | + 150 C | Tube | 223 W | Single | 300 V | 1.54 V | 100 nA | +/- 20 V |