IGBT Transistors - Kaimeite

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4 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
APT27GA90BD15	GET PRICE	PDF RFQ	31 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	TO-247-3	+ 150 C		223 W	Single	900 V	2.5 V	48 A	100 nA	30 V
NGTG50N60FWG	GET PRICE	PDF RFQ	185 In-stock	onsemi	IGBT Transistors 600V/50A IGBT NPT TO-247	Through Hole	TO-247	+ 150 C	Tube	223 W	Single	600 V	1.45 V	100 A	200 nA	30 V
NGTB50N60FWG	GET PRICE	PDF RFQ	146 In-stock	onsemi	IGBT Transistors 600V/50A IGBT NPT TO-247	Through Hole	TO-247	+ 150 C	Tube	223 W	Single	600 V	1.45 V	100 A	200 nA	30 V
IXGH42N30C3	GET PRICE VIEW	PDF RFQ		IXYS	IGBT Transistors 42 Amps 300V	Through Hole	TO-247-3	+ 150 C	Tube	223 W	Single	300 V	1.54 V		100 nA	+/- 20 V

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