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Gate-Emitter Leakage Current :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRGP4650DPBF
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RFQ
258
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC Through Hole TO-247-3 + 175 C Tube 134 W 600 V 1.9 V 50 A 100 nA 20 V
IRGP4660DPBF
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RFQ
156
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IR / Infineon IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC Through Hole TO-247-3 + 175 C Tube 134 W 600 V 1.9 V 50 A 70 uA 20 V
IRGP4650D-EPBF
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RFQ
77
In-stock
IR / Infineon IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC Through Hole TO-247AD-3 + 175 C Tube 134 W 600 V 1.9 V 50 A 100 nA 20 V
IRGP4660D-EPBF
GET PRICE
RFQ
73
In-stock
IR / Infineon IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC Through Hole TO-247AD-3 + 175 C Tube 134 W 600 V 1.9 V 50 A 70 uA 20 V
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