IGBT Transistors - Kaimeite

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5 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
FPAB30BH60B	GET PRICE	PDF RFQ	2,500 In-stock	Fairchild Semiconductor	IGBT Transistors SPM for Front-End Rectifier;Motion-SPM	Through Hole		+ 125 C	Tube	104 W		600 V		30 A	250 uA
IRGSL10B60KDPBF	GET PRICE	PDF RFQ	156 In-stock	IR / Infineon	IGBT Transistors 600V UltraFast 10-30kHz	Through Hole	TO-262-3		Tube	104 W	Single	600 V	2.2 V	22 A		+/- 20 V
HGTG12N60C3D	GET PRICE	PDF RFQ	377 In-stock	Fairchild Semiconductor	IGBT Transistors 24a 600V IGBT UFS N-Channel	Through Hole	TO-247-3	+ 150 C	Tube	104 W	Single	600 V	1.65 V	24 A	+/- 100 nA	+/- 20 V
HGTP12N60C3D	GET PRICE	PDF RFQ	424 In-stock	Fairchild Semiconductor	IGBT Transistors HGTP12N60C3D	Through Hole	TO-220-3	+ 150 C	Tube	104 W	Single	600 V	1.65 V	24 A	+/- 100 nA	+/- 20 V
IRG4PC50KDPBF	GET PRICE VIEW	PDF RFQ		Infineon Technologies	IGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IGBT	Through Hole	TO-247-3	+ 150 C	Tube	104 W	Single	600 V	2.2 V	52 A		+/- 20 V

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