IGBT Transistors - Kaimeite

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4 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IRGP6690D-EPBF	GET PRICE	PDF RFQ	647 In-stock	IR / Infineon	IGBT Transistors 600V UltraFast IGBT TO-247	Through Hole	TO-247AD-3	+ 175 C	Tube	483 W	Single	600 V	1.65 V	140 A	200 nA	20 V
IKW40N120H3	GET PRICE	PDF RFQ	8,500 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-247-3	+ 175 C	Tube	483 W	Single	1200 V	2.7 V	80 A	600 nA	20 V
IRGP6690DPBF	GET PRICE	PDF RFQ	21 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast IGBT TO-247	Through Hole	TO-247AC-3	+ 175 C	Tube	483 W	Single	600 V	1.65 V	140 A	200 nA	20 V
IGW40N120H3	GET PRICE	PDF RFQ	475 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-247-3	+ 175 C	Tube	483 W	Single	1200 V	2.05 V	80 A	600 nA	+/- 20 V

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