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Package / Case :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IKW30N65ES5
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RFQ
406
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Infineon Technologies IGBT Transistors Trenchstop 5 IGBT Through Hole TO-247-3 + 175 C   188 W   650 V 1.35 V   100 nA +/- 20
IKP30N65F5
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RFQ
447
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop 5 Through Hole TO-220-3 + 175 C Tube 188 W Single 650 V 1.6 V 55 A 100 nA 20 V
IKP30N65H5
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RFQ
200
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop 5 Through Hole TO-220-3 + 175 C Tube 188 W Single 650 V 1.65 V 55 A 100 nA 20 V
IGP30N65F5
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RFQ
447
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop 5 Through Hole TO-220-3 + 175 C Tube 188 W Single 650 V 1.9 V 55 A 100 nA 20 V
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RFQ
500
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop 5 Through Hole TO-220-3 + 175 C Tube 188 W Single 650 V 1.9 V 55 A 100 nA 20 V
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