IGBT Transistors - Kaimeite

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4 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXYX100N120C3	GET PRICE	PDF RFQ	260 In-stock	IXYS	IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT	Through Hole	TO-247-3	+ 175 C	Tube	1150 W	Single	1200 V	2.9 V	188 A	100 nA	30 V
IXXK200N65B4	GET PRICE	PDF RFQ	71 In-stock	IXYS	IGBT Transistors 650V/370A TRENCH IGBT GENX4 XPT	Through Hole	TO-264-3	+ 175 C	Tube	1150 W	Single	650 V	1.4 V	370 A	200 nA	20 V
IXXX200N65B4	GET PRICE	PDF RFQ	49 In-stock	IXYS	IGBT Transistors 650V/370A Trench IGBT GenX4 XPT	Through Hole	PLUS247-3	+ 175 C	Tube	1150 W	Single	650 V		370 A	200 nA	20 V
IXYK100N120C3	GET PRICE	PDF RFQ	20 In-stock	IXYS	IGBT Transistors 1200V 188A XPT IGBT	Through Hole	TO-264-3	+ 175 C	Tube	1150 W	Single	1200 V	2.9 V	188 A	100 nA	30 V

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