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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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456
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequ... | Through Hole | TO-247-3 | + 150 C | 415 W | Single | 600 V | 2.8 V | 93 A | 100 nA | 30 V | ||
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144
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Freq... | Through Hole | TO-247-3 | + 150 C | 415 W | Single | 600 V | 2.8 V | 93 A | 100 nA | 30 V |
